• DocumentCode
    1057811
  • Title

    High mobility strained Ge PMOFETs with high-k gate dielectric and metal gate on Si substrate

  • Author

    Donnelly, J.P. ; Kelly, D.Q. ; Garcia-Gutierrez, D.I. ; José-Yacamán, M. ; Banerjee, S.K.

  • Author_Institution
    Univ. of Texas at Austin, Austin
  • Volume
    44
  • Issue
    3
  • fYear
    2008
  • Firstpage
    240
  • Lastpage
    241
  • Abstract
    A thin (~20 nm) compressively-strained selective epitaxially grown Ge film was grown on small Si active areas by ultra-high vacuum-chemical vapour deposition. The Ge PMOSFETs with HfO2 gate dielectric show a ~2 x drive current enhancement and greater than 2 x improvement in hole mobility compared to control Si PMOSFETs.
  • Keywords
    MOSFET; dielectric properties; germanium; silicon; Ge PMOSFET; Ge film; HfO2 gate dielectric; Si substrate; high mobility; high-kappa gate dielectric; metal gate; ultra-high vacuum-chemical vapour deposition;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20082558
  • Filename
    4446203
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1057811