Thin-Film InGaAs/GaAsP MQWs Solar Cell With Backside Nanoimprinted Pattern for Light Trapping

Author

Watanabe, K. ; Boram Kim ; Inoue, Takeru ; Sodabanlu, Hassanet ; Sugiyama, Masakazu ; Goto, Misako ; Hayashi, Shin´ichiro ; Miyano, Kenjiro ; Nakano, Yoshiaki

Author_Institution

Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan

Volume

4

Issue

4

fYear

2014

fDate

Jul-14

Firstpage

1086

Lastpage

1090

Abstract

A light-trapping structure of the thin-film GaAs p-i-n single-junction solar cell with InGaAs/GaAsP multiple quantum wells (MQWs) was successfully demonstrated. Using a nanoimprinting method with ultraviolet curing resin, the submicron light-scattering dielectric array was fabricated on the back surface of the cell for enhanced optical absorption in the MQWs. The epitaxially grown photovoltaic active layer approximately 2.5 μm in thickness was successfully transferred to the stainless steel support substrate with backside light-scattering structure from the GaAs growth substrate. The light-trapping pattern-induced sample showed improved absorption in MQWs and resulted in 1.7 times larger quantum efficiency than the cell without the backside pattern.

Keywords

III-V semiconductors; curing; gallium arsenide; gallium compounds; indium compounds; nanopatterning; semiconductor growth; semiconductor quantum wells; semiconductor thin films; solar cells; GaAs; GaAs growth substrate; InGaAs-GaAsP; back surface; backside light-scattering structure; backside nanoimprinted pattern; enhanced optical absorption; epitaxially grown photovoltaic active layer; light-trapping structure; quantum efficiency; stainless steel support substrate; submicron light-scattering dielectric array; thin-film GaAs p-i-n single-junction solar cell; thin-film InGaAs-GaAsP multiple quantum well solar cell; ultraviolet curing resin; Absorption; Gallium arsenide; Indium gallium arsenide; Optical surface waves; Photovoltaic cells; Quantum well devices; Surface waves; Light trapping; multiple quantum wells (MQWs); quantum efficiency spectrum; thin-film III–V cell;

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2014.2312486

Filename

6810153