Bipolar cascade superluminescent diodes at the 1.04μm wavelength regime

Author

Guol, Shi-Hao ; Wang, Jr-Hung ; Wu, Yu-Huei ; Lin, Wei ; Yang, Ying-Jay ; Sun, Chi-Kuang ; Pan, Ci-Ling ; Shi, Jin-Wei

Author_Institution

Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei

Volume

21

Issue

5

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

328

Lastpage

330

Abstract

In this study, we investigate the performance of GaAs-based bipolar cascade superluminescent diodes with different cavity lengths. The device operates around the important bio-optical therapeutic 1.04-mum wavelength window. The introduction of tunnel junctions tends to minimize the nonuniform carrier distribution between distinct multiple quantum-wells (QWs), which is a problem in conventional SLDs, whose electroluminescent spectra are governed by the center wavelength of QWs near the p-side. Our devices exhibit nice electrical characteristics of low leakage current and overcome the limitation of nonuniform carrier distribution, thereby presenting a promising prospect for the near infrared white-light sources.

Keywords

III-V semiconductors; bio-optics; gallium arsenide; leakage currents; semiconductor quantum wells; superluminescent diodes; GaAs; bio-optical therapeutic wavelength window; bipolar cascade superluminescent diodes; electroluminescent spectra; leakage current; near infrared white-light sources; nonuniform carrier distribution; quantum wells; tunnel junctions; wavelength 1.04 mum; Amplified spontaneous emission; GaAs; superluminescent diodes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2011140

Filename

4738383