Title :
IIa-7 compensation of residual boron in extrinsic Si:In detectors by neutron transmutation of silicon
Author :
Takei, W.J. ; Thomas, R.N.
fDate :
9/1/1977 12:00:00 AM
Keywords :
Boron; Detectors; Gallium arsenide; Impurities; Laboratories; Neutrons; Photoconducting materials; Production; Silicon; Temperature measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18920
