• DocumentCode
    1057899
  • Title

    IIa-9 room-temperature operation of Ga(1-x)AlxAs/GaAs double heterostructure lasers grown by metalorganic chemical vapor deposition (late paper)

  • Author

    Dupuis, Russell ; Dapkus, P.D.

  • Volume
    24
  • Issue
    9
  • fYear
    1977
  • fDate
    9/1/1977 12:00:00 AM
  • Firstpage
    1195
  • Lastpage
    1196
  • Keywords
    Chemical lasers; Chemical vapor deposition; DH-HEMTs; Doping; Gallium arsenide; Molecular beam epitaxial growth; Optical materials; Optical pulses; Production; Pulsed laser deposition;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18921
  • Filename
    1479113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1057899