Title :
A 1-V 45-GHz Balanced Amplifier With 21.5-dB Gain Using 0.18-
CMOS Technology
Author :
Jin, Jun-De ; Hsu, Shawn S H
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu
fDate :
3/1/2008 12:00:00 AM
Abstract :
A fully integrated balanced amplifier was realized in a standard 0.18-mum CMOS technology. From the measured-parameters, a gain up to 21.5 dB was achieved at 45.4 GHz under a supply voltage of only 1 V and a total power consumption of 89 mW. An effective technique, i.e., pi-type parallel resonance, was proposed to enhance the device and circuit frequency response. In addition, the semicoaxial line structure was used to reduce the signal loss and physical size of the Lange couplers in the amplifier. To the best of the authors´ knowledge, the proposed balanced amplifier demonstrated the highest operation frequency and the lowest operation voltage among the published millimeter-wave amplifiers using a similar technology.
Keywords :
CMOS integrated circuits; MIMIC; coupled circuits; differential amplifiers; millimetre wave amplifiers; CMOS technology; Lange couplers; circuit frequency response; frequency 45 GHz; frequency 45.4 GHz; gain 21.5 dB; integrated balanced amplifier; millimeter-wave amplifiers; pi-type parallel resonance; power 89 mW; semicoaxial line structure; size 0.18 mum; voltage 1 V; Balanced amplifier; CMOS; Lange coupler; millimeter wave; parallel resonance; semicoaxial line;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2008.916865