Title :
IIIa-2 characterization of electronic gate current in IGFETS operating in the linear and saturation regions
Author :
Cottrell, P.E. ; Troutman, R.R. ; Ning, Tak H.
fDate :
9/1/1977 12:00:00 AM
Keywords :
Current measurement; Degradation; Electron emission; Electron traps; Fabrication; Geometry; Gettering; Radiative recombination; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18933
