DocumentCode

1058019

Title

IIIa-2 characterization of electronic gate current in IGFETS operating in the linear and saturation regions

Author

Cottrell, P.E. ; Troutman, R.R. ; Ning, Tak H.

Volume

24

Issue

9

fYear

1977

fDate

9/1/1977 12:00:00 AM

Firstpage

1200

Lastpage

1200

Keywords

Current measurement; Degradation; Electron emission; Electron traps; Fabrication; Geometry; Gettering; Radiative recombination; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1977.18933

Filename

1479125