Title :
IIIb-3 orientation dependence of impact ionization by electrons and holes in GaAs
Author :
Pearsall, T.P. ; Nahory, R.E.
fDate :
9/1/1977 12:00:00 AM
Keywords :
Charge carrier processes; Chemicals; Electric variables measurement; Gallium arsenide; Heterojunctions; Impact ionization; Photodetectors; Photovoltaic cells; Semiconductor diodes; Semiconductor materials;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18942
