DocumentCode

1058129

Title

IIIb-6 ion implantation in InP

Author

Donnelly, J.P. ; Hurwitz, C.E.

Volume

24

Issue

9

fYear

1977

fDate

9/1/1977 12:00:00 AM

Firstpage

1204

Lastpage

1205

Keywords

Annealing; Conductivity; Fabrication; Gallium arsenide; Implants; Indium phosphide; Ion implantation; Laboratories; Microwave devices; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1977.18944

Filename

1479136