Title :
IIIb-6 ion implantation in InP
Author :
Donnelly, J.P. ; Hurwitz, C.E.
fDate :
9/1/1977 12:00:00 AM
Keywords :
Annealing; Conductivity; Fabrication; Gallium arsenide; Implants; Indium phosphide; Ion implantation; Laboratories; Microwave devices; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18944
