DocumentCode :
1058138
Title :
IIIb-5 properties of alternate-monolayer (GaAs)n(AlAs)mcrystals
Author :
Gossard, Arthur C.
Volume :
24
Issue :
9
fYear :
1977
fDate :
9/1/1977 12:00:00 AM
Firstpage :
1204
Lastpage :
1204
Keywords :
Carrier confinement; DH-HEMTs; Electrons; Gallium arsenide; Heterojunctions; Indium phosphide; Molecular beam epitaxial growth; Nonhomogeneous media; Photonic band gap; Radiative recombination;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18945
Filename :
1479137
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1058138
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