DocumentCode

1058159

Title

IIIb-7 isolation and n-type conduction from implantation in InP

Author

Davies, D.E. ; Lorenzo, J.P.

Volume

24

Issue

9

fYear

1977

fDate

9/1/1977 12:00:00 AM

Firstpage

1205

Lastpage

1205

Keywords

Annealing; Conductivity; Diodes; Gallium arsenide; Implants; Indium phosphide; Isolation technology; P-n junctions; Silicon; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1977.18947

Filename

1479139