Title :
IVa-4 low frequency noise characteristics of ion implanted "Buried channel" NMOS devices
Author :
Fu, H.S. ; Tasch, A.F.
fDate :
9/1/1977 12:00:00 AM
Keywords :
1f noise; Frequency; Implants; Instruments; Laboratories; Low-frequency noise; MOS devices; Noise generators; Noise level; Semiconductor device noise;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18951
