DocumentCode
1058214
Title
Hot Carrier Effects in Wireless Communication Systems Built on Short-Channel MOSFETs
Author
Wu, Hsiao-Chun ; Herlekar, Sameer R. ; Saquib, Mohammad ; Srivastava, Ashok
Author_Institution
Louisiana State Univ., Baton Rouge
Volume
6
Issue
7
fYear
2007
fDate
7/1/2007 12:00:00 AM
Firstpage
2402
Lastpage
2406
Abstract
Phase noise is a critical factor that degrades the synchronization performance of a wireless communication receiver. Hot-carriers (HCs), found in the CMOS synchronization devices, are high-energy charge-carriers that can degrade the MOSFETs performance by damaging the internal device structure and lead to the phase noise increase therein. Such incremental phase noise can be related to the essential parameter, namely the MOSFET threshold voltage due to the HC effect, which is particularly evident in the short-channel MOSFET devices. In this letter, we analyze the impact of the phase noise arising from the HC effect on the wireless systems in terms of the bit-error-rate (BER) and the signal-to-interference-plus-noise ratio (SINR).
Keywords
CMOS integrated circuits; MOSFET; error statistics; hot carriers; phase noise; quadrature amplitude modulation; radio receivers; radiofrequency interference; semiconductor device noise; synchronisation; BER; CMOS synchronization devices; HC; MOSFET threshold voltage; QAM; SINR; bit-error-rate; high-energy charge-carriers; hot carrier effects; internal device structure damage; phase noise; short-channel MOSFET; signal-to-interference-plus-noise ratio; synchronization performance; wireless communication receiver; Bit error rate; Degradation; Hot carrier effects; Hot carriers; MOSFETs; Phase noise; Signal analysis; Signal to noise ratio; Threshold voltage; Wireless communication;
fLanguage
English
Journal_Title
Wireless Communications, IEEE Transactions on
Publisher
ieee
ISSN
1536-1276
Type
jour
DOI
10.1109/TWC.2007.05953
Filename
4274990
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