Title :
IVa-5 leakage current and refresh time measurements on the charge-coupled RAM cell
Author :
Chatterjee, P.K. ; Tasch, A.F. ; Fu, H.-S. ; Holloway
fDate :
9/1/1977 12:00:00 AM
Keywords :
Application specific processors; Chemical technology; Laboratories; Leakage current; Random access memory; Silicon; Spectroscopy; Surface morphology; Temperature; Time measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18952
