Title :
Long Wavelength VCSEL-by-VCSEL Optical Injection Locking
Author :
Hayat, Ahmad ; Bacou, Alexandre ; Rissons, Angélique ; Mollier, Jean-Claude ; Iakovlev, Vladimir ; Sirbu, Alexei ; Kapon, Eli
Author_Institution :
Dept. of Electron.-Optronics-Signals (DEOS), Univ. de Toulouse, Toulouse, France
fDate :
7/1/2009 12:00:00 AM
Abstract :
Vertical-cavity surface-emitting laser (VCSEL)-by-VCSEL optical injection locking to obtain high cutoff frequencies of 1.3-mum VCSELs is demonstrated. A detailed physical explanation of the underlying mechanism is presented. VCSELs from the same wafer have been used in a master-follower configuration. Two probe stations are used in this experiment to power-up two VCSELs simultaneously. Polarization insensibility of the injection locking is demonstrated and a novel architecture is proposed to achieve cutoff frequency doubling. For the first time, a high cutoff frequency is achieved through optically injection locking the satellite mode of a long wavelength VCSEL. Injection-locking spectra with variable injection powers and variable detuning values have been obtained and methods have been proposed to obtain high cutoff and/or resonance frequencies. A rate-equation-based model is presented. Simulations have been carried out using this model. Finally, a linear increases in the follower VCSEL cutoff frequency with increasing injected power is demonstrated by using a semiconductor optical amplifier.
Keywords :
laser tuning; optical harmonic generation; semiconductor optical amplifiers; surface emitting lasers; VCSEL-by-VCSEL optical injection locking; cutoff frequency doubling; master-follower configuration; polarization insensibility; rate-equation-based model; satellite mode; semiconductor optical amplifier; variable detuning value; variable injection power; vertical-cavity surface-emitting laser; wavelength 1.3 mum; 1.3- $mu$m vertical-cavity surface-emitting laser (VCSEL); micro wave response of VCSELs; optical injection locking; probe station testing;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2009.2022809