Title :
IVa-8 models for current runaway in thin insulators by impact ionization
Author :
Kashat, I. ; Klein, N.
fDate :
9/1/1977 12:00:00 AM
Keywords :
Delay; Electric breakdown; FETs; Gallium arsenide; Impact ionization; Insulation; Logic gates; Radiative recombination; Semiconductor device breakdown; Switches;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18956
