Title :
IVb-3 low power depletion mode ion-implanted GaAs FET integrated circuits
Author :
Eden, R.C. ; Welch, B.M.
fDate :
9/1/1977 12:00:00 AM
Keywords :
Digital integrated circuits; FET integrated circuits; Fabrication; Gallium arsenide; Integrated circuit technology; Inverters; Ion implantation; Large scale integration; MESFETs; Power dissipation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18957
