A 1-GHz BiCMOS RF front-end IC

Author

Meyer, Robert G. ; Mack, William D.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

29

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

350

Lastpage

355

Abstract

An RF front-end IC containing a low-noise amplifier and mixer is described. On-chip temperature and supply-voltage compensation is used to stabilize circuit performance. Realized in a BiCMOS process, the circuit consumes 13.0-mA total current from a 5-V supply. The amplifier gain at 900 MHz is 16 dB, the noise figure is 2.2 dB, and the input third-order intermodulation intercept is -10 dBm. The mixer input third-order intermodulation intercept is +6 dBm with 15.8 dB noise figure

Keywords

BiCMOS integrated circuits; compensation; linear integrated circuits; mixers (circuits); mobile radio systems; preamplifiers; radio receivers; ultra-high-frequency amplifiers; 1 GHz; 13 mA; 15.8 dB; 16 dB; 2.2 dB; 5 V; 900 MHz; BiCMOS RF frontend IC; LNA; UHF; low-noise amplifier; mixer; onchip compensation; supply-voltage compensation; temperature compensation; Application specific integrated circuits; BiCMOS integrated circuits; Filters; Local oscillators; Low-noise amplifiers; Noise figure; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Temperature;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.278360

Filename

278360