DocumentCode :
1058340
Title :
V-3 low threshold, high efficiency, CW AlxGa1-xAs injection lasers
Author :
Ettenberg, M.
Volume :
24
Issue :
9
fYear :
1977
fDate :
9/1/1977 12:00:00 AM
Firstpage :
1212
Lastpage :
1213
Keywords :
Crystallization; Epitaxial layers; Gallium arsenide; Heterojunctions; Laboratories; Materials science and technology; Physics; Power lasers; Reflectivity; Spatial resolution;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18964
Filename :
1479156
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1058340
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