• DocumentCode
    1058340
  • Title

    V-3 low threshold, high efficiency, CW AlxGa1-xAs injection lasers

  • Author

    Ettenberg, M.

  • Volume
    24
  • Issue
    9
  • fYear
    1977
  • fDate
    9/1/1977 12:00:00 AM
  • Firstpage
    1212
  • Lastpage
    1213
  • Keywords
    Crystallization; Epitaxial layers; Gallium arsenide; Heterojunctions; Laboratories; Materials science and technology; Physics; Power lasers; Reflectivity; Spatial resolution;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18964
  • Filename
    1479156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1058340