DocumentCode :
1058383
Title :
V-5 an analysis of the effects of interface recombination on the transient response of double heterojunction devices
Author :
Armiento, C.A. ; Fonstad, C.G.
Volume :
24
Issue :
9
fYear :
1977
fDate :
9/1/1977 12:00:00 AM
Firstpage :
1213
Lastpage :
1213
Keywords :
Charge carrier lifetime; Diode lasers; Heterojunctions; Indium phosphide; Laboratories; Laser modes; Light emitting diodes; Materials science and technology; Photodiodes; Transient response;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18967
Filename :
1479159
Link To Document :
بازگشت