Title :
V-6 1.7 µm heterojunction lasers and photodiodes of In.53Ga.47As/InP
fDate :
9/1/1977 12:00:00 AM
Keywords :
Crystallization; Diode lasers; Epitaxial layers; Gallium arsenide; Heterojunctions; Laser theory; Materials science and technology; Photodiodes; Physics; Spatial resolution;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18968
