Title :
V-4 topographical investigation of variations of stoichiometry in Ga1-xAlxAs and carrier concentrations in GaAs using electroreflectance
Author :
Pollak, F.H. ; Vanier, P.E. ; Raccah, P.M.
fDate :
9/1/1977 12:00:00 AM
Keywords :
Crystallization; Diode lasers; Epitaxial layers; Gallium arsenide; Heterojunctions; Light emitting diodes; Materials science and technology; Photodiodes; Physics; Spatial resolution;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18969
