DocumentCode :
1058409
Title :
Improvement Potential and Equalization Example for Multidrop DRAM Memory Buses
Author :
Fredriksson, Henrik ; Svensson, Christer
Author_Institution :
Dept. of Electr. Eng., Linkoping Univ., Linkoping, Sweden
Volume :
32
Issue :
3
fYear :
2009
Firstpage :
675
Lastpage :
682
Abstract :
For PC DRAM memory buses, the number of slots per channel have been decreased as signal frequencies increase. This limits the data capacity per channel. In this paper, we show that the slot reduction is not due to fundamental limits of the channel structure but due to signaling schemes. An equalization scheme is presented which enables higher bit-rates with minimum modification of bus structure and memory circuits. The circuitry added to the host side of the bus has reasonable complexity and features very low latency. Measurements of memory-to-host transmissions over a four-drop-bus at 2.6 Gb/s using a 0.13 mum CMOS test-circuit is presented.
Keywords :
CMOS memory circuits; DRAM chips; integrated circuit testing; system buses; CMOS test-circuit; DRAM equalization scheme; PC DRAM buses; bit rate 2.6 Gbit/s; data capacity per channel potential improvement; four-drop-bus; memory circuit bus structure; memory circuit channel structure; memory circuit signaling scheme; memory-to-host transmission; multidrop DRAM memory buses; size 0.13 mum; slot per channel signal frequency; Adaptive equalizers; DRAM; channel capacity; multidrop bus;
fLanguage :
English
Journal_Title :
Advanced Packaging, IEEE Transactions on
Publisher :
ieee
ISSN :
1521-3323
Type :
jour
DOI :
10.1109/TADVP.2009.2013818
Filename :
5067002
Link To Document :
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