• DocumentCode
    105848
  • Title

    Physics-Based Statistical Modeling of PCM Current Drift Including Negative-Drift-Coefficients

  • Author

    Betti Beneventi, Giovanni ; Ferro, Marcello ; Calderoni, Alessandro ; Fantini, P.

  • Author_Institution
    ARCES-Univ. of Bologna, Bologna, Italy
  • Volume
    34
  • Issue
    7
  • fYear
    2013
  • fDate
    Jul-13
  • Firstpage
    879
  • Lastpage
    881
  • Abstract
    Current drift over time in amorphous (α) chalcogenide (C)-based phase-change memory (PCM) is investigated through statistical electrical characterization of 45-nm-PCMs integrating αGe2Sb2Te5. Then a physically based analytical model that explains drift statistics as a function of observation time is presented. In particular, we address the negative-drift-coefficients (NDC) phenomenon, which we recognize as intrinsic to the αC nature.
  • Keywords
    antimony compounds; chalcogenide glasses; electric properties; germanium compounds; phase change materials; statistical analysis; Ge2Sb2Te5; PCM current drift; amorphous phase change memory; chalcogenide based phase change memory; negative drift coefficient; physics based statistical modeling; size 45 nm; Chalcogenides; drift; negative drift coefficients (NDC); phase-change memory (PCM); statistical modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2261892
  • Filename
    6532324
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=105848