DocumentCode :
105848
Title :
Physics-Based Statistical Modeling of PCM Current Drift Including Negative-Drift-Coefficients
Author :
Betti Beneventi, Giovanni ; Ferro, Marcello ; Calderoni, Alessandro ; Fantini, P.
Author_Institution :
ARCES-Univ. of Bologna, Bologna, Italy
Volume :
34
Issue :
7
fYear :
2013
fDate :
Jul-13
Firstpage :
879
Lastpage :
881
Abstract :
Current drift over time in amorphous (α) chalcogenide (C)-based phase-change memory (PCM) is investigated through statistical electrical characterization of 45-nm-PCMs integrating αGe2Sb2Te5. Then a physically based analytical model that explains drift statistics as a function of observation time is presented. In particular, we address the negative-drift-coefficients (NDC) phenomenon, which we recognize as intrinsic to the αC nature.
Keywords :
antimony compounds; chalcogenide glasses; electric properties; germanium compounds; phase change materials; statistical analysis; Ge2Sb2Te5; PCM current drift; amorphous phase change memory; chalcogenide based phase change memory; negative drift coefficient; physics based statistical modeling; size 45 nm; Chalcogenides; drift; negative drift coefficients (NDC); phase-change memory (PCM); statistical modeling;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2261892
Filename :
6532324
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=105848
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