Title :
VI-6 a new type of interfacial charge in the SiO2-Si system
fDate :
9/1/1977 12:00:00 AM
Keywords :
Charge transfer; Electrons; Laboratories; Lattices; MOS devices; Silicon; Stability; Temperature; Thermal stresses; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18977
