• DocumentCode
    1058555
  • Title

    Charge handling capacity in charge coupled devices

  • Author

    Huang, J.S.T.

  • Author_Institution
    Honeywell, Inc., Plymouth, MN
  • Volume
    24
  • Issue
    10
  • fYear
    1977
  • fDate
    10/1/1977 12:00:00 AM
  • Firstpage
    1234
  • Lastpage
    1238
  • Abstract
    In analog signal processing applications, the charge handling capacity of a charge coupled device (CCD) is an important parameter that determines the dynamic range. In this paper, approximate expressions for the signal handling capacity for surface-channel and buried-channel CCD´s are derived and compared. The upper limit for the buried-channel charge capacity is imposed by the onset of surface electron accumulation.
  • Keywords
    Capacitance; Charge coupled devices; Charge-coupled image sensors; Dynamic range; Electrons; Electrostatics; Equations; Helium; Signal processing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18985
  • Filename
    1479177
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1058555