Title :
Charge handling capacity in charge coupled devices
Author_Institution :
Honeywell, Inc., Plymouth, MN
fDate :
10/1/1977 12:00:00 AM
Abstract :
In analog signal processing applications, the charge handling capacity of a charge coupled device (CCD) is an important parameter that determines the dynamic range. In this paper, approximate expressions for the signal handling capacity for surface-channel and buried-channel CCD´s are derived and compared. The upper limit for the buried-channel charge capacity is imposed by the onset of surface electron accumulation.
Keywords :
Capacitance; Charge coupled devices; Charge-coupled image sensors; Dynamic range; Electrons; Electrostatics; Equations; Helium; Signal processing; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18985
