Temperature dependence of MOSFET characteristics in weak inversion

A knowledge of the MOSFET operating in weak inversion is important for circuits with low leakage specifications. This paper discusses the effect of temperature on the MOSFET in weak inversion. The reciprocal slope of the log IDSversus VGSrelationship between source-drain current IDSand gate bias VGSmay be given by with and γ ≡ , where Coxis the oxide capacitance per unit area, Cssthe surface states capacitance per unit area, the electronic charge, εsthe permittivity of silicon, NBthe bulk doping concentration, the Boltzmann\´s constant, the absolute temperature, and the extrapolated value of the energy gap of lightly doped silicon at K. This theoretical formula was in good agreement with experimental results in a temperature range of interest.