Title :
A modification of the Gummel—Poon charge-control equations
Author :
Vaughan, R. ; Getreu, I.E. ; Kwok, C.Y.
Author_Institution :
University of New South Wales, Sydney, Australia
fDate :
10/1/1977 12:00:00 AM
Abstract :
The incorporation of the effect of basewidth modulation on the base transit time in the dc Gummel-Poon charge-control equations results in the modeling of basewidth modulation and high-level injection effects by separate factors.
Keywords :
Bipolar transistors; Cutoff frequency; Difference equations; Doping; Electron devices; Kirk field collapse effect; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18990
