DocumentCode
1058612
Title
Design considerations for exponentially retrograded silicon hyperabrupt varactors
Author
Tyagi, M.S. ; Gupta, A.K.
Author_Institution
Indian Institute of Technology, Kanpur, India
Volume
24
Issue
10
fYear
1977
fDate
10/1/1977 12:00:00 AM
Firstpage
1261
Lastpage
1263
Abstract
Avalanche breakdown voltage VB , space-charge width at breakdown WB , and 
index 
of exponentially retrograded silicon hyperabrupt p+-n junctions have been calculated for various impurity distributions. Empirical relations are obtained expressing WB , VB , and the maximum value of in terms of impurity profile parameters of the retrograded region. Applications of these relations in the design of hyperabrupt varactors is indicated.
index of exponentially retrograded silicon hyperabrupt p+-n junctions have been calculated for various impurity distributions. Empirical relations are obtained expressing W in terms of impurity profile parameters of the retrograded region. Applications of these relations in the design of hyperabrupt varactors is indicated.Keywords
Avalanche breakdown; Bipolar transistors; Breakdown voltage; Capacitance-voltage characteristics; Equations; Impurities; Integrated circuit modeling; Predictive models; Silicon; Varactors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18991
Filename
1479183
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