Title :
Injection control in TED´s by metal-n+(thin)-n cathode structure
Author :
Krishnan, C.N. ; Sharan, R.
Author_Institution :
Indian Institute of Technology, Kanpur, India
fDate :
10/1/1977 12:00:00 AM
Abstract :
Current transport through a reverse-biased metal-n+(thin)-n structure has been studied from the point of view of injection-controlled operation of transferred electron devices. Parameters of the thin heavily doped layer required to give a desired amount of barrier lowering in n GaAs have been calculated.
Keywords :
Cathodes; Gallium arsenide; Gunn devices; Image analysis; Ohmic contacts; Oscillators; Schottky barriers; Semiconductor device doping; Thickness control; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18992
