• DocumentCode
    1058620
  • Title

    Injection control in TED´s by metal-n+(thin)-n cathode structure

  • Author

    Krishnan, C.N. ; Sharan, R.

  • Author_Institution
    Indian Institute of Technology, Kanpur, India
  • Volume
    24
  • Issue
    10
  • fYear
    1977
  • fDate
    10/1/1977 12:00:00 AM
  • Firstpage
    1264
  • Lastpage
    1266
  • Abstract
    Current transport through a reverse-biased metal-n+(thin)-n structure has been studied from the point of view of injection-controlled operation of transferred electron devices. Parameters of the thin heavily doped layer required to give a desired amount of barrier lowering in n GaAs have been calculated.
  • Keywords
    Cathodes; Gallium arsenide; Gunn devices; Image analysis; Ohmic contacts; Oscillators; Schottky barriers; Semiconductor device doping; Thickness control; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18992
  • Filename
    1479184
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1058620