Title :
Regional Monte Carlo modeling of electron transport and transit-time estimation in graded-base HBT´s
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fDate :
4/1/1994 12:00:00 AM
Abstract :
Steady-state electron transport in graded-base heterojunction bipolar transistors is investigated using a regional ensemble Monte Carlo approach. Besides the graded band and scattering parameters already incorporated in the particle model, emitter-base and collector-base junctions are also considered in the boundary conditions for carrier injection/absorption. It is shown that optimum base transit times are directly related to the maximum average velocities, which occur at different base width-composition combinations. It also illustrates a general approach to studying electron transport in graded-band devices
Keywords :
Monte Carlo methods; S-parameters; boundary-value problems; carrier lifetime; carrier mobility; heterojunction bipolar transistors; semiconductor device models; Monte Carlo modeling; boundary conditions; carrier absorption; carrier injection; collector-base junctions; electron transport; emitter-base junctions; graded band parameters; graded-band devices; graded-base HBT; heterojunction bipolar transistors; maximum average velocities; particle model; regional ensemble Monte Carlo approach; scattering parameters; transit-time estimation; Bipolar transistors; Boundary conditions; Cutoff frequency; Distribution functions; Electrons; Heterojunction bipolar transistors; Monte Carlo methods; Particle scattering; Scattering parameters; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
