• DocumentCode
    1058632
  • Title

    Simple model for threshold voltage in a short-channel IGFET

  • Author

    Troutman, R.R. ; Fortino, A.G.

  • Author_Institution
    IBM General Technology Division, Essex Junction, VT
  • Volume
    24
  • Issue
    10
  • fYear
    1977
  • fDate
    10/1/1977 12:00:00 AM
  • Firstpage
    1266
  • Lastpage
    1268
  • Abstract
    The threshold voltage of a short-channel IGFET can be expressed, in relation to that for a long-channel device, as V_{T} = V_{TLC} - \\alpha - \\beta V_{DS} . This behavior is deduced from a charge injection model and is verified both by two-dimensional numerical simulations and by actual threshold data.
  • Keywords
    Cathodes; Circuit simulation; Computational modeling; Electrons; Extrapolation; Geometry; Numerical simulation; Solid modeling; Subthreshold current; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18993
  • Filename
    1479185
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1058632