DocumentCode :
1058632
Title :
Simple model for threshold voltage in a short-channel IGFET
Author :
Troutman, R.R. ; Fortino, A.G.
Author_Institution :
IBM General Technology Division, Essex Junction, VT
Volume :
24
Issue :
10
fYear :
1977
fDate :
10/1/1977 12:00:00 AM
Firstpage :
1266
Lastpage :
1268
Abstract :
The threshold voltage of a short-channel IGFET can be expressed, in relation to that for a long-channel device, as 
. This behavior is deduced from a charge injection model and is verified both by two-dimensional numerical simulations and by actual threshold data.
. This behavior is deduced from a charge injection model and is verified both by two-dimensional numerical simulations and by actual threshold data.Keywords :
Cathodes; Circuit simulation; Computational modeling; Electrons; Extrapolation; Geometry; Numerical simulation; Solid modeling; Subthreshold current; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18993
Filename :
1479185
Link To Document :
