DocumentCode
1058656
Title
Variability study and design considerations of p-n junction hyperabrupt varactor diodes
Author
Kumar, Rajendra ; Bhattacharyya, A.B.
Author_Institution
Indian Institute of Technology, New Delhi, India
Volume
24
Issue
10
fYear
1977
fDate
10/1/1977 12:00:00 AM
Firstpage
1270
Lastpage
1272
Abstract
Variability analysis of the hyperabrupt epitaxial p-n junction varactor diode has been carried out. Results are given for the dependence of the electrical parameters on the various physical parameters of the device. A comparison has been made between a Schottky hyperabrupt varactor and a p-n junction hyperabrupt varactor, and the undesirable effects of the impurity compensation in the latter case are clearly brought out.
Keywords
Diodes; Doping; Electrons; Epitaxial layers; Logic devices; P-n junctions; Semiconductor process modeling; Solid state circuits; Spontaneous emission; Varactors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18995
Filename
1479187
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