Title :
Variability study and design considerations of p-n junction hyperabrupt varactor diodes
Author :
Kumar, Rajendra ; Bhattacharyya, A.B.
Author_Institution :
Indian Institute of Technology, New Delhi, India
fDate :
10/1/1977 12:00:00 AM
Abstract :
Variability analysis of the hyperabrupt epitaxial p-n junction varactor diode has been carried out. Results are given for the dependence of the electrical parameters on the various physical parameters of the device. A comparison has been made between a Schottky hyperabrupt varactor and a p-n junction hyperabrupt varactor, and the undesirable effects of the impurity compensation in the latter case are clearly brought out.
Keywords :
Diodes; Doping; Electrons; Epitaxial layers; Logic devices; P-n junctions; Semiconductor process modeling; Solid state circuits; Spontaneous emission; Varactors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18995
