Dependence of thin film transistor characteristics on the deposition conditions of silicon nitride and amorphous silicon

Author

Miyashita, Haruzo ; Watabe, Yoshimi

Author_Institution

ANELVA Corp., Tokyo, Japan

Volume

41

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

499

Lastpage

503

Abstract

The systematic relation between thin film transistors´ (TFT´s) characteristics and the deposition conditions of amorphous silicon nitride (a-SiN) films and hydrogenated amorphous silicon (a-Si:H) films is investigated. It is observed that field effect mobility μ_FE and threshold voltage V_th of the TFT´s strongly depend on the deposition conditions of these films. The maximum μ_FE of 0.88 cm²/V·s is obtained for the TFT of which a-SiN film is deposited at a pressure of 85 Pa. This phenomenon is due to the variation of the interface states density between a-Si:H film and a-SiN film

Keywords

amorphous semiconductors; amorphous state; carrier mobility; elemental semiconductors; hydrogen; insulated gate field effect transistors; insulating thin films; interface electron states; plasma CVD; plasma CVD coatings; semiconductor growth; semiconductor thin films; semiconductor-insulator boundaries; silicon; silicon compounds; thin film transistors; 85 Pa; Al-Si:H-Si:N-Cr-Si; PECVD; TFT characteristics; a-Si:H films; a-SiN films; amorphous SiN; deposition conditions; field effect mobility; hydrogenated amorphous Si films; interface states density; thin film transistor; threshold voltage; Amorphous silicon; Computer displays; Electrodes; Fabrication; Iron; Liquid crystal displays; Plasma temperature; Semiconductor films; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.278501

Filename

278501