Radiation-induced leakage currents in n-channel Silicon-on-sapphire MOST´s

This paper describes an experimental study of the source-to-drain leakage currents in silicon-on-sapphire n-channel MOS transistors before and after exposure to ionizing radiation. The leakage currents are studied as a function of device geometry and various processing parameters. The effects on the leakage currents of wet and dry gate oxidations, the transistor channel length, and optical (UV) bleaching are described. A model of hole traps in the Al2O3is proposed to explain the radiation-induced leakage currents.