Title :
Transient effects in accumulation mode p-channel SOI MOSFET´s operating at 77 K
Author :
Martino, J.A. ; Rotondaro, A.L.P. ; Simoen, E. ; Magnusson, U. ; Claeys, C.
Author_Institution :
LSI, Sao Paulo Univ., Brazil
fDate :
4/1/1994 12:00:00 AM
Abstract :
This paper critically examines the conduction mechanisms in accumulation mode p-channel SOI MOSFET´s operating at cryogenic temperatures. In particular, attention is given to the body current component, which in most cases is experimentally not observed at 77 K or 4.2 K. As will be demonstrated, both the body current and the back accumulation current show pronounced transient effects at low temperatures, which are related to the slow generation/recombination of minority carriers. This is caused by deep depletion from the front interface, which suppresses these current components. By the application of either a light pulse or a large drain voltage Vds minority carriers are generated nearly instantaneously in the body region, rendering the body and the back accumulation components clearly visible
Keywords :
SIMOX; electron-hole recombination; insulated gate field effect transistors; minority carriers; semiconductor-insulator boundaries; silicon; transients; 77 K; CMOS technology; SIMOX substrate; accumulation mode p-channel SOI MOSFET; back accumulation current; body current component; conduction mechanisms; cryogenic temperature; deep depletion; drain current; front gate accumulation threshold; large drain voltage; light pulse; minority carrier generation; minority carrier recombination; transconductance; transient effects; Body regions; CMOS technology; Cryogenics; MOSFET circuits; Pulse generation; Semiconductor films; Silicon on insulator technology; Substrates; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
