Title :
Comments on "Bandgap narrowing in silicon bipolar transistors"
Author :
Martinelli, Ramon U.
Author_Institution :
RCA Laboratories, Princeton, NJ
Abstract :
This note is a response to the paper by Slotboom and de Graaff. The author discusses the detection of bandgap narrowing in silicon bipolar transistors. In particular, he reviews and reanalyzes previously published data [1] in the light of Slotboom and de Graaff´s recent results [2], [3].
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.19003
