Title :
An electromigration failure model for interconnects under pulsed and bidirectional current stressing
Author :
Tao, Jiang ; Cheung, Nathan W. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
4/1/1994 12:00:00 AM
Abstract :
An electromigration failure model which can be used to project the electromigration lifetime under pulsed DC and AC current stressing has been reported. The experimental results indicate that different metallization systems (Al-2%Si, Al4%Cu/TiW, and Cu) show similar failure behaviors, which can be explained and predicted by this model. The pulsed DC lifetime is found to be longer than DC lifetime, and the AC lifetime is found to be very much longer. This recognition can provide significant relief to circuit designs involving metals carrying pulsed DC and AC currents, and allow a more aggressive design to improve circuit density and speed
Keywords :
circuit reliability; electromigration; failure analysis; integrated circuit technology; metallisation; semiconductor device models; AC current stressing; AC lifetime; AlCu-TiW; AlSi; Cu; DC lifetime; bidirectional current stressing; electromigration failure model; electromigration lifetime; interconnects; metallization systems; pulsed DC current stressing; Circuit synthesis; Copper; Dry etching; Electromigration; Integrated circuit interconnections; Metallization; Semiconductor device measurement; Semiconductor films; Testing; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
