DocumentCode :
1058799
Title :
Excess noise in semiconducting BaSrTiO3
Author :
Agarwal, Rajendra P. ; Ambrózy, András ; Hartnagel, Hans L.
Author_Institution :
University of Newcastle upon Tyne, Newcastle upon Tyne, England
Volume :
24
Issue :
12
fYear :
1977
fDate :
12/1/1977 12:00:00 AM
Firstpage :
1337
Lastpage :
1341
Abstract :
The noise characteristics of semiconducting BaSrTiO3 were investigated as a function of frequency, bias current, and volume of the sample. It was found that the noise is approximately inversely proportional to the volume of the sample and the frequency dependence is a 
behavior. This and other results have implications regarding an optimized use of this material for temperature-sensing applications.
behavior. This and other results have implications regarding an optimized use of this material for temperature-sensing applications.Keywords :
Background noise; Bolometers; Fluctuations; Infrared detectors; Semiconductivity; Semiconductor device noise; Semiconductor materials; Thermal conductivity; Voltage; Working environment noise;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.19009
Filename :
1479201
Link To Document :
