Title :
Electron-beam controlled switching using quartz and polycrystalline ZnS
Author :
Jiang, Weihua ; Zinsmeyer, Kim ; Less, Melissa ; Schoenbach, Karh H. ; Kristiansen, M.
Author_Institution :
Lab. of Beam Technol., Nagaoka Univ. of Technol., Niigata, Japan
fDate :
4/1/1994 12:00:00 AM
Abstract :
Results of electron-beam controlled switching experiments with switch samples of quartz crystal and polycrystalline zinc selenide (ZnSe) are presented. For switch samples of both materials, drastic reductions of the switch resistance were induced by the electron beam. The quartz sample showed very fast temporal response (less than 1 ns) with potential applicability for current control. The ZnSe samples, on the other hand, showed longer current transients (on the order of 10 ns) with exponential development of the switch resistance after the electron beam pulse
Keywords :
II-VI semiconductors; electron beam applications; pulsed power technology; quartz; semiconductor switches; switching; 1 to 10 ns; SiO2; ZnSe; current control; electron-beam controlled switching; polycrystalline ZnS; quartz; switch resistance; temporal response; Charge carriers; Conducting materials; Crystalline materials; Dark current; Electron beams; Laboratories; Optical control; Optical pulses; Optical switches; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
