Title :
The Poole-Frenkel effect in 6H-SiC diode characteristics
Author :
Pelaz, Lourdes ; Orantes, José L. ; Vincente, José ; Bailón, Luis A. ; Barbolla, Juan
Author_Institution :
Dept. de Electr. y Electron., Valladolid Univ., Spain
fDate :
4/1/1994 12:00:00 AM
Abstract :
The large bandgap of SiC makes the recombination mechanism the main process in determining the forward current in a large range of temperature. We have added the Poole-Frenkel effect to the conventional Shockley-Read-Hall (SRH) term of the numerical device simulator MEDICI. This paper shows the influence of this effect on SiC
Keywords :
Poole-Frenkel effect; digital simulation; electron-hole recombination; semiconductor device models; semiconductor diodes; semiconductor materials; silicon compounds; 6H-SiC diode characteristics; MEDICI; Poole-Frenkel effect; Shockley-Read-Hall term; SiC; forward current; large bandgap; numerical device simulator; recombination mechanism; Charge carrier processes; Electron emission; Electron traps; Numerical simulation; Photonic band gap; Radiative recombination; Semiconductor diodes; Silicon carbide; Temperature distribution; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
