DocumentCode
1058815
Title
The Poole-Frenkel effect in 6H-SiC diode characteristics
Author
Pelaz, Lourdes ; Orantes, José L. ; Vincente, José ; Bailón, Luis A. ; Barbolla, Juan
Author_Institution
Dept. de Electr. y Electron., Valladolid Univ., Spain
Volume
41
Issue
4
fYear
1994
fDate
4/1/1994 12:00:00 AM
Firstpage
587
Lastpage
591
Abstract
The large bandgap of SiC makes the recombination mechanism the main process in determining the forward current in a large range of temperature. We have added the Poole-Frenkel effect to the conventional Shockley-Read-Hall (SRH) term of the numerical device simulator MEDICI. This paper shows the influence of this effect on SiC
Keywords
Poole-Frenkel effect; digital simulation; electron-hole recombination; semiconductor device models; semiconductor diodes; semiconductor materials; silicon compounds; 6H-SiC diode characteristics; MEDICI; Poole-Frenkel effect; Shockley-Read-Hall term; SiC; forward current; large bandgap; numerical device simulator; recombination mechanism; Charge carrier processes; Electron emission; Electron traps; Numerical simulation; Photonic band gap; Radiative recombination; Semiconductor diodes; Silicon carbide; Temperature distribution; Thermal conductivity;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.278514
Filename
278514
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