Analysis of the properties of three-terminal transferred-electron logic devices

A two-dimensional analysis of Schottky-barrier gate GaAs logic devices utilizing the transferred-electron effect is described. The analysis is used to study the basic properties of two devices with anode to cathode spacing of 13 µm and 33 µm. The reduction in current drop due to the presence of the gate is discussed. The switching properties of the 13-µm device are studied for operation with either anode or cathode resistance. A gate delay of 30 ps and a total gate power of 180 mW is estimated.