Title :
Improvement of hot-carrier and radiation hardnesses in metal-oxide-nitride-oxide semiconductor devices by irradiation-then-anneal treatments
Author :
Chang-Liao, Kuei-Shu ; Hwu, Jenn-Gwo
Author_Institution :
Dept. of Nucl. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
4/1/1994 12:00:00 AM
Abstract :
The hardnesses of hot-carrier and radiation of metal-oxide nitride-oxide semiconductor (MONOS) devices can be improved by the irradiation-then-anneal (ITA) treatments. Each treatment includes an irradiation of Co-60 with a total dose of 1M rads(SiO2) and an anneal in N2 at 400°C for 10 min successively. This improvement can be explained by the release of SiO2/Si interfacial strain
Keywords :
annealing; gamma-ray effects; hot carriers; interface electron states; metal-insulator-semiconductor devices; radiation hardening (electronics); reliability; 1 Mrad; 10 min; 400 C; C-V curves; Co-60 irradiation; MONOS devices; N2; N2 annealing; SiO2-Si; SiO2/Si interfacial strain release; hot-carrier hardness; interface trap density; irradiation-then-anneal treatment; metal-oxide-nitride-oxide semiconductor devices; radiation hardness; reliability; Annealing; Capacitive sensors; Degradation; Hot carriers; Ionizing radiation; MONOS devices; Stress; Substrates; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
