• DocumentCode
    1058871
  • Title

    A useful method for approximating the profile of ions implanted through a thin film

  • Author

    Bernstein, T. ; Kolodny, A.

  • Author_Institution
    Technion--Israel Institute of Technology, Haifa, Israel
  • Volume
    24
  • Issue
    12
  • fYear
    1977
  • fDate
    12/1/1977 12:00:00 AM
  • Firstpage
    1365
  • Lastpage
    1366
  • Abstract
    An approximate calculation method is presented for finding profiles of ions implanted through a thin film, based on standard range tables. Both the projected range and straggling in the substrate are calculated.
  • Keywords
    Bipolar transistors; Doping; Electron devices; Equations; P-n junctions; Radiative recombination; Silicon; Solid state circuits; Spontaneous emission; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.19016
  • Filename
    1479208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1058871