Title :
A useful method for approximating the profile of ions implanted through a thin film
Author :
Bernstein, T. ; Kolodny, A.
Author_Institution :
Technion--Israel Institute of Technology, Haifa, Israel
fDate :
12/1/1977 12:00:00 AM
Abstract :
An approximate calculation method is presented for finding profiles of ions implanted through a thin film, based on standard range tables. Both the projected range and straggling in the substrate are calculated.
Keywords :
Bipolar transistors; Doping; Electron devices; Equations; P-n junctions; Radiative recombination; Silicon; Solid state circuits; Spontaneous emission; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.19016
