Title :
Temperature dependence of gate forward turn-on voltage (Vf) of i-Al 0.3Ga0.7As/n-GaAs HIGFET´s
Author :
Futigami, Nobutaka ; Kawata, Yukihiro ; Takatani, Shinichiro ; Shigeta, Junji ; Miyazaki, Masaru
Author_Institution :
Hitachi VLSI Eng. Corp., Tokyo, Japan
fDate :
4/1/1994 12:00:00 AM
Abstract :
Forward gate current-voltage characteristics and their temperature dependence are investigated for i-Al0.3Ga0.7As/n-GaAs doped-channel HIGFET´s (DC-HIGFET´s) with the gate length of 0.3 μm. The temperature coefficient of the gate forward turn-on voltage (Vf) varies with the thickness (tU) of an i-AlGaAs layer, and shows a minimum value of -0.8~-0.9 mV/deg at tu=10 nm
Keywords :
III-V semiconductors; aluminium compounds; direct coupled FET logic; gallium arsenide; insulated gate field effect transistors; logic gates; 0.3 mum; Al0.3Ga0.7As-GaAs; DCFL inverter; GaAs; doped-channel HIGFET; forward gate current-voltage characteristics; gate forward turn-on voltage; gate length; i-Al0.3Ga0.7As/n-GaAs HIGFET; temperature coefficient; temperature dependence; Current-voltage characteristics; Doping; Electrodes; FETs; Gallium arsenide; MESFETs; OFDM modulation; Oxidation; Temperature dependence; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
