Title :
Modeling pentode-like characteristics of recessed-gate static induction transistor
Author :
Strollo, Antonio G M
Author_Institution :
Dipartimento di Ingegneria Elettronica, Naples Univ., Italy
fDate :
4/1/1994 12:00:00 AM
Abstract :
A new analytical model is described for the pentode-like region of the characteristics of recessed-gate SIT structures. The model allows one to investigate the transition from saturating characteristics of long channel JFET´s to nonsaturating behavior of SIT devices, taking into account realistic device geometry
Keywords :
field effect transistors; high field effects; power transistors; semiconductor device models; PISCES-II; analytical model; device geometry; drain output characteristics; long channel JFET; nonsaturating behavior; numerical simulation; pentode-like characteristics; recessed-gate static induction transistor; saturating characteristics; Analytical models; Boundary conditions; Carrier confinement; Electron mobility; Geometry; High power amplifiers; Poisson equations; Solid modeling; Switching converters; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
