Title :
Mode-dependent retardation in (Ga,Al)P waveguide modulators
Author_Institution :
Laboratories RCA, Zurich, Switzerland
fDate :
9/1/1974 12:00:00 AM
Keywords :
Closed-form solution; Diode lasers; Gallium arsenide; Optical noise; P-n junctions; Predictive models; Refractive index; Silicon; Tellurium; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1974.1068409
