SiC MOS interface characteristics

Author

Brown, Dale M. ; Ghezzo, Mario ; Kretchmer, James ; Downey, Evan ; Pimbley, Joseph ; Palmour, John

Author_Institution

Gen. Electr. Corp. Res. & Dev. Center, Schenectady, NY, USA

Volume

41

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

618

Lastpage

620

Abstract

It is well known that SiC can be thermally oxidized to form SiO ₂ layers. And Si MOSFET IC´s using thermally grown SiO₂ gate dielectrics are the predominant IC technology in the world today. However the SiC/SiO₂ interface has not been well characterized as was the case for Si MOS in the early 1960´s. This paper presents data which for the first time characterizes the SiC/SiO₂ interface and explains one of the previously unexplained abnormalities observed in the characteristics of SiC MOSFET´s

Keywords

capacitance; insulated gate field effect transistors; interface electron states; metal-insulator-semiconductor devices; semiconductor materials; semiconductor-insulator boundaries; silicon compounds; C-V analysis; MOS capacitor; NMOS enhancement mode devices; NMOS inversion mode devices; SiC; SiC MOS interface characteristics; SiC MOSFET; SiC-SiO₂; SiC/SiO₂ interface; channel depletion mode MOSFET; drain I-V characteristics; interface state density; Artificial intelligence; Electric breakdown; MOS devices; MOSFET circuits; Photonic band gap; Silicon carbide; Substrates; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.278521

Filename

278521