DocumentCode :
1058933
Title :
A comment on “The GTCC stored charge model”
Author :
Heasell, E.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume :
41
Issue :
4
fYear :
1994
fDate :
4/1/1994 12:00:00 AM
Firstpage :
627
Lastpage :
628
Abstract :
Hamel and Selvakumar (ibid., vol. 38, pp. 1467-76, 1991) have criticized the Klose and Weider, transient integral charge control (TICC) charge partitioning model (see ibid., vol. 34, pp. 1090-9, 1987) in comparison with their generalized transient charge control (GTCC) relation. In addition, it is claimed (Hamel, ibid., vol. 40, pp. 1713-16, 1993) `...the problem of rigorously determining the charge partitioning in one dimension has now been rectified...´ We wish to demonstrate that the analytic basis of the GTCC model presented is completely fallacious
Keywords :
capacitance; semiconductor device models; 1D charge partitioning determination; GTCC stored charge model; capacitance model; continuity equations; generalized integral charge control; semiconductor devices; transient integral charge control charge partitioning model; transport equations; Boundary conditions; Differential equations; Integral equations; Steady-state;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.278525
Filename :
278525
Link To Document :
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