High-level behavior of power rectifiers: A quantitative analysis of the forward voltage drop

In forward biased power rectifiers, quasi-neutrality holds in all regions of the device. As a consequence, numerical analysis of the behavior of the devices can be carried out without involving the treatment of Poisson\´s equation. This allows fast and accurate computation of the forward characteristic. Taking into account the physical mechanisms appearing at high concentration levels of impurities and carriers, the numerical results obtained agree with the experimental ones. This is shown for a series of devices covering a wide range of technological parameters such as the width of the semiconductor layers, the conditions of gold diffusion, etc.